IRF IRL40B215 40V Single N-Channel HEXFET Power MOSFET

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.033mH, RG = 50W, IAS = 98A, VGS =10V. ISD £ 98A, di/dt £ 1005A/μs, VDD V(BR)DSS, TJ 175°C. Pulse width 400μs; duty cycle 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

R is measured at TJ approximately 90°C.

Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50W, IAS = 28A, VGS =10V.

Pulse drain current is limited at 480A by source bonding technology.