IRF IRL60B216 60V Single N-Channel HEXFET Power MOSFET

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V.

ISD 100A, di/dt 1420A/μs, VDD V(BR)DSS, TJ 175°C.

Pulse width 400μs; duty cycle 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

R is measured at TJ approximately 90°C.

Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50W, IAS = 46A, VGS =10V.

Pulse drain current is limited to 780A by source bonding technology.