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Onsemi MBR3100 Axial Lead Rectifier

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Onsemi MBR3100 Axial Lead Rectifier
Manufacturer: Onsemi

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

Features Model
  • Low Reverse Current
  • Low Stored Charge, Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Guard−ring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature
  • High Surge Capacity
  • Pb−Free Packages are Available
Mfr. Part No. Description

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