The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode.
State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Mfr. Part No. | Description |